her504 diode

Specifications of HER504 diode Maximum Recurrent Peak Reverse Voltage: 300 VMaximum Average Forward Output Current: 5 AMaximum Forward Voltage Drop per element at 1.0A DC: 1.3 VMaximum reverse recovery time: 75 nsTypical Junction Capacitance: 70 pFPackage: DO-27Weight: 0.4 gramsOperating and Storage Temperature Range: -65…+150 °C The HER504 diode has a cathode (-) and anode (+). […]

Hamamatsu InGaAs PIN Photodiode

Hamamatsu InGaAs PIN Photodiode Hamamatsu Photonics is a leading manufacturer of devices for the generation and measurement of visible, infrared, and ultraviolet light. Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are (group III) elements of the […]