Description
Photodiode S1227-33BR – Hamamatsu Ceramic Silicon p. diode from 190 to 1000 nm
For UV to visible, precision photometry; suppressed IR sensitivity
Features
– Resin potting type
– Suppressed IR sensitivity
– Low dark current
$55.00
Photodiode S1227-33BR – Hamamatsu Ceramic Silicon p. diode from 190 to 1000 nm
For UV to visible, precision photometry; suppressed IR sensitivity
Features
– Resin potting type
– Suppressed IR sensitivity
– Low dark current
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