Description

3.1mm(0.122") Flat Lens Silicon Fotodiodo PD3060CP

Colour:Transparent, chip size: 1.54mm x 1.54mm  (0.061" x 0.061")

Range of Spectral Bandwidth:400—1100 nm

Wavelength of Peak Sensitivity:940 nm

Open-Circuit Voltage: 0.32 V

Reverse photosensitive current:18 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 12 pF

Rise/Fall Time: 25/25 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

1000 pcs/bag, The whole package purchase is more favorable

This product is a photodiode and requires an external amplifier circuit

Please note that the position in the figure below may expose metal pins. If it affects your application, please do not buy it. You can consider buying a product with a 2.28mm pin.

Similar products：

PD3060RP3: 3mm flat lens, Edged, red, short pin, 2.54 pin pitch, reverse photosensitive current 18uA

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PD3064RP: 3mm flat lens, Edged, red, long pin, 2.54 pin pitch, reverse photosensitive current 20uA

PD3060CP: 3mm flat lens, Edged, transparent, short pin, 2.54 pin pitch, reverse photosensitive current 18uA

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PD3060BP: 3mm flat lens, Edged, black, short pin, 2.54 pin pitch, reverse photosensitive current 18uA

PD3060RP2: 3mm flat lens, Edged, red, long pin, 2.28 pin pitch, reverse photosensitive current 18uA

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Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor