Description
- Origin: CN(Origin)
- Condition: New
- Type: LED
- Model Number: PD3061RP
- Package Type: Through Hole
- Range of Spectral Bandwidth: 560—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Open-Circuit Voltage: 0.32 V
- Reverse photosensitive current: 18 uA
- Dark Current: <10 nA
- Reverse Breakdown Voltage: >30 V
- Total Capacitance: 12 pF
- Rise/Fall Time: 25/25 nS
3mm Flat Lens Silicon Photodiode PD3061RP
Applications: Fiber Amplifier , Optical fiber sensor
Colour: Red , chip size: 1.54mm x 1.54mm (0.061" x 0.061")
Range of Spectral Bandwidth: 560—1100nm
Wavelength of Peak Sensitivity: 940 nm
Open-Circuit Voltage: 0.32 V
Reverse photosensitive current: 18 uA
Dark Current: <10 nA
Reverse Breakdown Voltage: >30 V
Total Capacitance: 12 pF
Rise/Fall Time: 25/25 nS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag, The whole package purchase is more favorable
This product is a photodiode and requires an external amplifier circuit
Please note that the position in the figure below may expose metal pins. If it affects your application, please do not buy it. You can consider buying a product with a 2.28mm pin.
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Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed:Photodiode—fast /Phototransistor—slow
E. Amplification characteristics: Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol:Photodiode
Phototransistor
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