Description
- Type: LED
- Origin: CN(Origin)
- Condition: New
- Model Number: SGPD5051C6
- Package Type: Through Hole
- Range of Spectral Bandwidth: 400—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Open Circuit Voltage: 0.32 V
- Reverse photosensitive current: 18 uA
- Dark Current: <10 nA
- Reverse Breakdown Voltage: >30 V
- Total Capacitance: 12 pF
- Rise/Fall Time: 25/25 nS
5mm Flat Lens Silicon Photodiode SGPD5051C6
Range of Spectral Bandwidth: 400—1100nm
Wavelength of Peak Sensitivity: 940 nm
Open-Circuit Voltage: 0.32 V
Reverse photosensitive current: 18 uA
Dark Current: <10 nA
Reverse Breakdown Voltage: >30 V
Total Capacitance: 12 pF
Rise/Fall Time: 25/25 nS
Difference between SGPD5051C6 and SGPD5051C9
SGPD5051C6: Chip size 1.54mm x 1.54mm , Reverse photosensitive current 18 uA
SGPD5051C9: Chip size 2.30mm x 2.30mm , Reverse photosensitive current 39 uA
Special reminder, this SGPD5051C6 is a photodiode and requires an external amplifier circuit. The phototransistor of the same shape is SGPT5053C
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed:Photodiode—fast /Phototransistor—slow
E. Amplification characteristics: Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol:Photodiode
Phototransistor
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