Description
- Type: LED
- Origin: CN(Origin)
- Condition: New
- Model Number: SGPD5082B6
- Package Type: Through Hole
- Range of Spectral Bandwidth: 700—1100 nm
- Wavelength of Peak Sensitivity: 850 nm
- Open-Circuit Voltage: 0.32 V
- Reverse photosensitive current: 18 uA
- Dark Current: <10 nA
- Reverse Breakdown Voltage: >30 V
- Total Capacitance: 12 pF
- Rise/Fall Time: 25/25 nS
5mm(0.197") Silicon Photodiode : SGPD5082B6
Range of Spectral Bandwidth: 700—1100nm
Wavelength of Peak Sensitivity: 850 nm
Open-Circuit Voltage: 0.32 V
Reverse photosensitive current: 18 uA
Dark Current: <10 nA
Reverse Breakdown Voltage: >30 V
Total Capacitance: 12 pF
Rise/Fall Time: 25/25 nS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
This product is a photodiode and requires an external amplifier circuit
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
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