Description

5mm(0.197") Silicon PIN Photodiode SGPD594B9

Range of Spectral Bandwidth: 840—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.32 V

Reverse photosensitive current: 120 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 22 pF

Rise/Fall Time: 45/45 nS

Difference between SGPD594B9 and SGPD594B6 and SGPD594B4

SGPD594B9:Chip size 2.30mm x 2.30mm , Reverse photosensitive current 120 uA

SGPD594B6:Chip size 1.54mm x 1.54mm , Reverse photosensitive current 150 uA

SGPD594B4:Chip size 1.09mm x 1.09mm , Reverse photosensitive current 85 uA

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

This product is a photodiode and requires an external amplifier circuit

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor