Description

5mm(0.197") Semi-cylindrical Silicon Photodiode SGPD538B

Chip size 3.00mm x 3.00mm , Active area 2.86mm x 2.86 mm

Range of Spectral Bandwidth: 840—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.32 V

Reverse photosensitive current: 85 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 25 pF

Rise/Fall Time: 50/50 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

Difference between SGPD538B and SGPD538B9 and SGPD538B6

SGPD538B   : Chip size 3.00mm x 3.00mm, Reverse photosensitive current 85 uA

SGPD538B9 : Chip size 2.30mm x 2.30mm, Reverse photosensitive current 60 uA

SGPD538B6 : Chip size 1.54mm x 1.54mm, Reverse photosensitive current 20 uA

This product is a photodiode and requires an external amplifier circuit

Difference between SGPD538B and PD438B and SGPD436B

SGPD538B :Size 5.0×3.8×6.6mm , Reverse photosensitive current 85 uA

PD438B      :Size 4.8×3.8×6.6mm , Reverse photosensitive current 85 uA

SGPD436B :Size 4.6×3.4×6.6mm , Reverse photosensitive current 83 uA

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor