Description

3.0×5.2mm Rectangular Photodiode SGPD638B

Chip size 3.00mm x 3.00mm , Active area 2.86mm x 2.86 mm

Range of Spectral Bandwidth: 840—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.32 V

Reverse Light Current: 70 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 25 pF

Rise/Fall Time: 50/50 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

1000 pcs/bag

Difference between SGPD638B and SGPD638B9 and PD638B6

SGPD638B   : Chip size 3.00mm x 3.00mm ,Reverse Light Current 70 uA

SGPD638B9 : Chip size 2.30mm x 2.30mm ,Reverse Light Current 39 uA

PD638B6: Chip size 1.54mm x 1.54mm ,Reverse Light Current 18 uA

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor