Description

20PCS, 0805 SMD Phototransistor, PT0805CS, Photosensor, Photosensitive receiving transistor

0805 SMD NPN Phototransistor： PT0805CS

Colour: Transparent

Range of Spectral Bandwidth：400—1100 nm

Wavelength of Peak Sensitivity: 940 nm

Collector Emitter Breakdown Voltage: >30 V

Emitter Collector Breakdown Voltage: >5 V

Collector Dark Current: <100 nA

Collector Emitter Saturation Voltage: <0.4 V

On State Collector Current: 1.0 mA

Rise/Fall Time: 15/15 μS

For detailed product parameters, please check the specifications and download the specifications from the company’s website

Factory direct sales, batch purchase customers can contact the seller to arrange production

3000 pcs/reel, The whole package purchase is more favorable

 

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—Fast /Phototransistor—Slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor