Description

3.1mm(0.122") Flat Lens Silicon Photodiode PD3061CP

Colour:Transparent   chip size: 1.54mm x 1.54mm  (0.061" x 0.061")

Range of Spectral Bandwidth:400—1100 nm

Wavelength of Peak Sensitivity:940 nm

Open-Circuit Voltage: 0.32 V

Reverse photosensitive current:18 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 12 pF

Rise/Fall Time: 25/25 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

This product is a photodiode and requires an external amplifier circuit

Please note that the position in the figure below may expose metal pins. If it affects your application, please do not buy it. You can consider buying a product with a 2.28mm pin.

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Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor