Description
- Type: LED
- Origin: CN(Origin)
- Condition: New
- Model Number: PD4001C
- Package Type: Through Hole
- Range of Spectral Bandwidth: 430—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Open-Circuit Voltage: 0.32 V
- Reverse Light Current: 39 uA
- Dark Current: <10 nA
- Reverse Breakdown: >30 V
- Total Capacitance: 22 pF
- Rise/Fall Time: 45/45 nS
5.2×3.7×1.8mm(0.205×0.146×0.071") Rectangular Photodiode: PD4001C
Range of Spectral Bandwidth: 430—1100nm
Wavelength of Peak Sensitivity: 940 nm
Open-Circuit Voltage: 0.32 V
Reverse Light Current: 39 uA
Dark Current: <10 nA
Reverse Breakdown Voltage: >30 V
Total Capacitance: 22 pF
Rise/Fall Time: 45/45 nS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag
Difference between PD4001C and PD4002C and PD4003C
PD4001C:Chip size 2.30mm x 2.30mm , Reverse Light Current 39 uA
PD4002C:Chip size 2.50mm x 2.50mm , Reverse Light Current 48 uA
PD4003C:Chip size 3.00mm x 3.00mm , Reverse Light Current 80 uA
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
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