Description

5.2×3.7×1.8mm Rectangular Photodiode:PD4003C

Range of Spectral Bandwidth: 400—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.32 V

Reverse Light Current: 80 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 27 pF

Rise/Fall Time: 50/50 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

Difference between PD4001C and PD4002C and PD4003C

PD4001C:Chip size 2.30mm x 2.30mm , Reverse Light Current 39 uA

PD4002C:Chip size 2.50mm x 2.50mm , Reverse Light Current 48 uA

PD4003C:Chip size 3.00mm x 3.00mm , Reverse Light Current 80 uA

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor