Description

5mm Flat Lens Silicon Photodiode SGPD5051C6

Range of Spectral Bandwidth: 400—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.32 V

Reverse photosensitive current: 18 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 12 pF

Rise/Fall Time: 25/25 nS

Difference between SGPD5051C6 and SGPD5051C9

SGPD5051C6: Chip size 1.54mm x 1.54mm , Reverse photosensitive current 18 uA

SGPD5051C9: Chip size 2.30mm x 2.30mm , Reverse photosensitive current 39 uA

Special reminder, this SGPD5051C6 is a photodiode and requires an external amplifier circuit. The phototransistor of the same shape is SGPT5053C

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

1000 pcs/bag

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor