Description
- Origin: Mainland China
- Condition: New
- Model Number: PT1921C
- Package Type: Surface Mount
- Range of Spectral Bandwidth: 550—1050 nm
- Wavelength of Peak Sensitivity: 940 nm
- Collector-Emitter Breakdown Voltage: >30 V
- Emitter-Collector Breakdown Voltage: >5 V
- Collector Dark Current: <100 nA
- Collector Emitter Saturation Voltage: <0.4 V
- ON-State Collector Current: 0.6 mA
- Rise/Fall Time: 15/15 μS
English is the original language, other languages are automatically translated, there may be translation errors
0603 SMD NPN Phototransistor： PT1921C
Colour: Transparent
Range of Spectral Bandwidth：550—1050 nm
Wavelength of Peak Sensitivity: 940 nm
Collector-Emitter Breakdown Voltage: >30 V
Emitter-Collector Breakdown Voltage: >5 V
Collector Dark Current: <100 nA
Collector Emitter Saturation Voltage: <0.4 V
ON-State Collector Current: 0.6 mA
Rise/Fall Time: 15/15μS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
3000 pcs/reel, The whole package purchase is more favorable
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
Round Lens NPN Phototransistor
Side Looking NPN Phototransistor
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