Description
- Origin: Mainland China
- Condition: New
- Model Number: SGPT2055B
- Package Type: Throught Hole
- Range of Spectral Bandwidth: 840—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Collector-Emitter Breakdown Voltage: >30 V
- Emitter-Collector Breakdown Voltage: >6 V
- Collector Dark Current: <100 nA
- Collector-Emitter Saturation Voltage: <=0.2 V
- ON-State Collector Current: 2.0 mA
- Rise/Fall Time: 15/15 μS
- DC Current Amplification Factor: 1000—1700
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1.8mm NPN Phototransistor SGPT2055B
Range of Spectral Bandwidth：840—1100 nm
Wavelength of Peak Sensitivity: 940 nm
Collector Emitter Breakdown Voltage: >30 V
Emitter Collector Breakdown Voltage: >6 V
Collector Dark Current: <100 nA
Collector Emitter Saturation Voltage: <=0.2 V
On State Collector Current: 2.0 mA
Rise/Fall Time: 15/15μS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
Buy the whole bag for more discounts 1000PCS/bag
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
Side Looking NPN Phototransistor
Round Lens NPN Phototransistor
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