Description
- Origin: Mainland China
- Condition: New
- Model Number: SGPT5903C
- Package Type: Throught Hole
- Range of Spectral Bandwidth: 600—1000 nm
- Wavelength of Peak Sensitivity: 800 nm
- Collector -Emitter Breakdown Voltage: 60 V
- Emitter-Collector Breakdown Voltage: 7 V
- Collector-Emitter Saturation Voltage: 1.0 V
- Base-Emitter Saturation Voltage: 1.45 V
- ON-State Collector Current: 2.8 mA
- Collector Dark Current: <1000 nA
- Rise/Fall Time: 60/60 μS
- DC Current Amplification Factor: 30000—90000
Note that this phototransistor is a DARLINGTON structure with very high sensitivity
5mm(0.197") DARLINGTON Phototransistor SGPT5903C
Colour: Transparent
Range of Spectral Bandwidth：600—1000 nm
Wavelength of Peak Sensitivity: 800 nm
Collector-Emitter Breakdown Voltage: >60 V
Emitter-Collector Breakdown Voltage: >7 V
Collector Dark Current: <1000 nA
Collector-Emitter Saturation Voltage: <=1.0 V
Base-Emitter Saturation Voltage: <=1.45 V
ON-State Collector Current: 2.8 mA
Rise/Fall Time: 60/60 μS
DC Current Amplification Factor: 30000—90000
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag, The whole package purchase is more favorable
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
DARLINGTON Phototransistor 
Round Lens NPN Phototransistor
Side Looking NPN Phototransistor
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