Description

English is the original language, other languages are automatically translated, there may be translation errors

Note that this phototransistor is a DARLINGTON structure with very high sensitivity

5mm(0.197") DARLINGTON Flat Lens Phototransistor SGPT5953C

Colour: Transparent

Range of Spectral Bandwidth：600—1000 nm

Wavelength of Peak Sensitivity: 800 nm

Collector-Emitter Breakdown Voltage: >60 V

Emitter-Collector Breakdown Voltage: >7 V

Collector Dark Current: <1000 nA

Collector-Emitter Saturation Voltage: <=1.0 V

Base-Emitter Saturation Voltage: <=1.45 V

ON-State Collector Current: 1.6 mA

Rise/Fall Time: 60/60μS

DC Current Amplification Factor: 30000—90000

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

1000 pcs/bag, The whole package purchase is more favorable

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

DARLINGTON Phototransistor  

Flat Lens NPN Phototransistor

Round Lens NPN Phototransistor

Side Looking NPN Phototransistor

SMD NPN Phototransistor

Bicrystal NPN Phototransistor

Other NPN Phototransistor