Description
- Origin: Mainland China
- Condition: New
- Model Number: SGPT524C
- Package Type: Throught Hole
- Range of Spectral Bandwidth: 400—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Collector Emitter Breakdown Voltage: >30 V
- Emitter Collector Breakdown Voltage: >6 V
- Collector Dark Current: <100 nA
- Collector Emitter Saturation Voltage: <=0.2 V
- On State Collector Current: 2.0 mA
- Rise/Fall Time: 15/15 μS
- DC Current Amplification Factor: 1000—1800
English is the original language, other languages are automatically translated, there may be translation errors
5mm(0.197") NPN Phototransistor SGPT524C
Colour: Transparent
Range of Spectral Bandwidth：400—1100 nm
Wavelength of Peak Sensitivity: 940 nm
Collector Emitter Breakdown Voltage: >30 V
Emitter Collector Breakdown Voltage: >6 V
Collector Dark Current: <100 nA
Collector Emitter Saturation Voltage: <=0.2 V
On State Collector Current: 2.0 mA
Rise/Fall Time: 15/15 μS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag, The whole package purchase is more favorable
Similar products:
SGPT524A: Suitable for receiving 940nm and above infrared rays
SGPT524B: Suitable for receiving 850nm and above infrared rays
SGPT524C: Suitable for visible light receiving, also can receive infrared rays
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
Round Lens NPN Phototransistor
Side Looking NPN Phototransistor
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