Description
- Origin: Mainland China
- Condition: New
- Model Number: PT2408/H2
- Package Type: Throught Hole
- Range of Spectral Bandwidth: 840—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Collector Emitter Breakdown Voltage: >30 V
- Emitter Collector Breakdown Voltage: >6 V
- Collector Dark Current: <100 nA
- Collector Emitter Saturation Voltage: <=0.2 V
- On State Collector Current: 1.5 mA
- Rise/Fall Time: 15/15 μS
- DC Current Amplification Factor: 1000—1800
- Two chip arrangemen: horizontal direction
- Center distance between two chips: 0.80 mm
English is the original language, other languages are automatically translated, there may be translation errors
Side Face Bicrystal Phototransistor PT2408B/H2
Colour: Black
Range of Spectral Bandwidth:840—1100 nm
Wavelength of Peak Sensitivity: 940 nm
Collector Emitter Breakdown Voltage: >30 V
Emitter Collector Breakdown Voltage: >6 V
Collector Dark Current: <100 nA
Collector Emitter Saturation Voltage: <=0.2 V
On State Collector Current: 1.5 mA
Rise/Fall Time: 15/15 μS
Two chip arrangemen: horizontal direction
Center distance between two chips: 0.80 mm
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
500 pcs/bag, The whole package purchase is more favorable
Different of several bicrystal phototransistor
1. PT2559B/L2, Black,two chips are longitudinal direction, Center distance between two chips is 0.61mm(0.024")
2. PT2559B/H2, Black,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024")
3. PT2408B/H2, Black,two chips are horizontal direction, Center distance between two chips is 0.80mm(0.0315")
4. PT5824C , Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024")
5.PT5724C , Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024"),pin pitches are 1.27mm(0.05")
6. PT5524C ,Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024"),pin pitches are 1.27mm(0.05")
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed:Photodiode—fast /Phototransistor—slow
E. Amplification characteristics: Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol:Photodiode
Phototransistor
Round Lens NPN Phototransistor
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