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20PCS Side Face NPN Bicrystal Phototransistor PT5824C, Photosensor, Photosensitive receiving transistor

$7.70

300 in stock

SKU: 1005003342039403 Category:

Description

  • Origin: Mainland China
  • Condition: New
  • Model Number: PT5824C
  • Package Type: Throught Hole
  • Range of Spectral Bandwidth: 450—1100 nm
  • Wavelength of Peak Sensitivity: 880 nm
  • Collector Emitter Breakdown Voltage: >30 V
  • Emitter Collector Breakdown Voltage: >6 V
  • Collector Dark Current: <100 nA
  • Collector Emitter Saturation Voltage: <=0.2V
  • On State Collector Current: 1.5 mA
  • Rise/Fall Time: 15/15 μS
  • Two chip arrangement: horizontal direction
  • Center distance between two chips: 0.61 mm

English is the original language, other languages are automatically translated, there may be translation errors

Side Face Bicrystal Phototransistor PT5824C

Colour: Transparent

Range of Spectral Bandwidth:450—1100 nm

Wavelength of Peak Sensitivity: 880 nm

Collector Emitter Breakdown Voltage: >30 V

Emitter Collector Breakdown Voltage: >6 V

Collector Dark Current: <100 nA

Collector Emitter Saturation Voltage: <=0.2 V

On State Collector Current: 1.5 mA

Rise/Fall Time: 15/15 μS

Two chip arrangement: horizontal direction

Center distance between two chips: 0.61mm

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

1000 pcs/bag, The whole package purchase is more favorable

Different of several bicrystal phototransistor

1. PT2559B/L2, Black,two chips are longitudinal direction, Center distance between two chips is 0.61mm(0.024")

2. PT2559B/H2, Black,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024")

3. PT2408B/H2, Black,two chips are horizontal direction, Center distance between two chips is 0.80mm(0.0315")

4. PT5824C      , Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024")

5. PT5724C      , Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024"),pin pitches are 1.27mm(0.05")

6. PT5524C      ,Transparent,two chips are horizontal direction, Center distance between two chips is 0.61mm(0.024"),pin pitches are 1.27mm(0.05")

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed:Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics: Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol:Photodiode

Phototransistor  

Bicrystal NPN Phototransistor

SMD NPN Phototransistor

Flat Lens NPN Phototransistor

Round Lens NPN Phototransistor

Side Looking NPN Phototransistor

 Other NPN Phototransistor

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