Description

3.0×5.2mm Rectangular Photodiode: PD638C3

Chip size 3.00mm x 3.00mm , Active area 2.86mm x 2.86 mm

Range of Spectral Bandwidth: 400—1100nm

Wavelength of Peak Sensitivity: 940 nm

Open-Circuit Voltage: 0.35 V

Reverse Light Current: 80 uA

Dark Current: <10 nA

Reverse Breakdown Voltage: >30 V

Total Capacitance: 25 pF

Rise/Fall Time: 50/50 nS

For detailed product parameters, please check the specifications and download the specifications from the company's website

Factory direct sales, batch purchase customers can contact the seller to arrange production

Difference between PD638C3 and SGPD638C9

PD638C3      : Chip size 3.00mm x 3.00mm , Reverse Light Current 80 uA

SGPD638C9 : Chip size 2.30mm x 2.30mm , Reverse Light Current 39 uA

Difference between Photodiode and Phototransistor

A.  Abbreviation:  Photodiode—PD /  Phototransistor—PT

B.  PIN Name: Photodiode—Anode and Cathode  / Phototransistor—Emitter and Collector

C.  Chip Structure: Photodiode—PN  / Phototransistor—NPN(or PNP)

D.  Response speed：Photodiode—fast /Phototransistor—slow

E.  Amplification characteristics： Photodiode—No / Phototransistor—Yes

F.  Output Linearity:   Photodiode—Good / Phototransistor—Bad

G.  Circuit symbol：Photodiode

Phototransistor