Description

660nm 200mW ML101J29-G Laser diode high power semiconductor laser tube

660nm 200mW ML101J29-G Laser diode high power semiconductor laser tube

ML101J29-G is a high power,high efficient AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 350mW.

ml101j29-g has a real-index-waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance.

Also, ml101j29-g has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation.

Features:
High Output Power: 350mW (Pulse)
High Efficiency: 0.95 W/A (typ.)
Visible Light: 658nm (typ.)

Applications:

FOR OPTICAL INFORMATION SYSTEMS
Portable High-Density Optical Disc Drives
Re-Writable DVD Drives

Wavelength: 660 +/- 5nm (red)
Standard power: 200mW
Voltage: 2.2V ~ 3.0V

Current: 340mA
Specifications: TO18 (5.6mm)
Life: more than 10,000 hours