Description

InGaAs PIN photodiode G8370-82 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.

Features
– Low PDL (Polarization Dependence Loss)
– Low noise, low dark current
– Large active area
– active area sizes: φ2 mm

Specifications

Photosensitive area	φ2.0 mm
Number of elements	1
Package	Metal
Package Category	TO-5
Cooling	Non-cooled
Spectral response range	0.9 to 1.7 μm
Peak sensitivity wavelength (typ.)	1.55 μm
Photosensitivity (typ.)	1.1 A/W
Dark current (max.)	25 nA
Cutoff frequency (typ.)	4 MHz
Terminal capacitance (typ.)	550 pF
Noise equivalent power (typ.)	4×10^-14 W/Hz^1/2
Measurement condition	Typ. Ta=25 ℃, Photosensitivity: λ=λp, Dark current: V_R=1 V, Cutoff frequency: V_R=1 V, R_L=50 Ω, -3 dB, Terminal capacitance: V_R=1 V, f=1 MHz, unless otherwise noted

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