Description
Hamamatsu G8370-85 Low PDL (Polarization Dependence Loss)
InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.
Features
– Low PDL (Polarization Dependence Loss)
– Low noise, low dark current
– Large active area
– active area sizes: φ5 mm
Specifications
| Photosensitive area | φ5.0 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package Category | TO-8 |
| Cooling | Non-cooled |
| Spectral response range | 0.9 to 1.7 μm |
| Peak sensitivity wavelength (typ.) | 1.55 μm |
| Photosensitivity (typ.) | 1.1 A/W |
| Dark current (max.) | 125 nA |
| Cutoff frequency (typ.) | 0.6 MHz |
| Terminal capacitance (typ.) | 3500 pF |
| Noise equivalent power (typ.) | 1×10-13 W/Hz1/2 |
| Measurement condition | Typ. Ta=25 ℃, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=1 V, f=1 MHz, unless otherwise noted |
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