Description

Hamamatsu S11142-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams

Features
– Direct detection of low energy (1 keV or more) electron beams with high sensitivity
– High gain: 300 times
high detection efficiency: 72 % (incident electronenergy: 1.5 keV)
– Large photosensitive area size: 14 × 14 mm
– φ2.0 mm hole in center of photosensitive area
– 4-element photodiode
– Thin ceramic package
– Uses a wiring board made of less magnetic materials

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.

Specifications