Description
Hamamatsu S11865-256G Photodiode array combined with signal processing IC for X-ray detection
This is a photodiode array with an amplifier and a phosphor sheet attached to the photosensitive area for X-ray detection. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing circuit chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configured by arranging multiple arrays in a row.
Features
-Data rate: 1 MHz max.
-Large element pitch: 0.2 mm pitch × 256 ch
-5 V power supply operation
-Simultaneous integration by using a charge amplifier array
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range
-Integrated timing generator allows operation at two different pulse timings
-Detectable energy range: 30 k to 100 keV
Specifications
| Image size | 51.2 x 0.3 mm |
|---|---|
| Number of effective pixels | 256 pixels |
| Pixel size | 0.1 x 0.3 mm |
| Pixel pitch | 0.2 mm |
| Supply voltage | 5 V |
| Scintillator | Phosphor sheet |
| Peak sensitivity wavelength | 720 nm |
| Line rate max. | 3844 lines/s |
| Charge amp feedback capacitance | 0.5 pF |
| Note | for X-ray |
| Measurement condition | Typ. Ta=25 ℃, unless otherwise noted, peak sensitivity wavelength: without phosphor sheet |
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