Description
Hamamatsu S11866-64-02 Photodiode array combined with signal processing IC
The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configured by arranging multiple arrays in a row. For X-ray detection applications, types with phosphor sheet affixed on the photosensitive area are also available. As the dedicated driver circuit, the C9118 series (sold separately) is provided.
Features
-Data rate: 1 MHz max.
-Large element pitch: 1.6 mm pitch × 64 ch
-5 V power supply operation
-Simultaneous integration by using a charge amplifier array
-Sequential readout with a shift register
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range
-Integrated timing generator allows operation at two different pulse timings
-Types with phosphor sheet affixed on the photosensitive area are available for X-ray detection
(S11865-64G/-128G, S11866-64G-02/-128G-02)
Specifications
Image size | 102.4 x 1.6 mm |
---|---|
Number of effective pixels | 64 pixels |
Pixel size | 1.5 x 1.6 mm |
Pixel pitch | 1.6 mm |
Supply voltage | 5 V |
Scintillator | None |
Spectral response range | 200 to 1000 nm |
Peak sensitivity wavelength | 720 nm |
Line rate max. | 14678 lines/s |
Charge amp feedback capacitance | 0.5 pF |
Measurement condition | Typ. Ta=25 ℃, unless otherwise noted |
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