Description
Hamamatsu S12023-05 Low bias operation, for 800 nm band
This is a 800 nm band near-infrared Si APD that can operate at low voltages, 200 V or less. This is a suitable for applications such as FSO (free space optics) and optical rangefinders.
Features
– Stable operation at low bias
– High-speed response
– High sensitivity and low noise
Specifications
| Type | Near infrared type (Low bias operation) |
|---|---|
| Photosensitive area | φ0.5 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Spectral response range | 400 to 1000 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 1 nA |
| Cutoff frequency (typ.) | 900 MHz |
| Terminal capacitance (typ.) | 2 pF |
| Breakdown voltage (typ.) | 150 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.65 V/℃ |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=800 nm, M=1 |
1pcs KBPC5010 50A 1000V Diode Bridge Rectifier kbpc5010
Reviews
There are no reviews yet.