Description
Hamamatsu S12092-05 High sensitivity in near infrared range (λ=900 nm)
This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).
Features
– High sensitivity in near infrared range (λ=900 nm)
– Stable operation
Specifications
| Type | Near infrared type (900 nm band, low terminal capacitance) |
|---|---|
| Photosensitive area | φ0.5 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 860 nm |
| Spectral response range | 440 to 1100 nm |
| Photosensitivity (typ.) | 0.52 A/W |
| Dark current (max.) | 2 nA |
| Cutoff frequency (typ.) | 400 MHz |
| Terminal capacitance (typ.) | 0.7 pF |
| Breakdown voltage (typ.) | 250 V |
| Temperature coefficient of breakdown voltage (typ.) | 1.85 V/℃ |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=900 nm, M=1 |
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