Description

Hamamatsu S13886-128 Photodiode array combined with signal processing IC

This is a Si photodiode array combined with a signal processing IC chip. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865/S11866 series). The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long and narrow image sensor can be configured by arranging multiple arrays in a row. For X-ray detection applications, types with phosphor sheet affixed on the photosensitive area are also available.

Features
-Data rate: 1 MHz max.
-Element pitch: 0.8 mm pitch × 128 ch
-3.3 V power supply operation
-Simultaneous integration method by using a charge amplifier array
-Low dark current due to zero-bias photodiode operation
-Integrated clamp circuit allows low noise and wide dynamic range.
-Integrated timing generator allows operation at two different pulse timings.
-Type with phosphor sheet affixed on the photosensitive area is available for X-ray detection (S13886-128G)

Specifications