Description

Hamamatsu S14536-500 Si detectors for high-energy particles

 

The S14536 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays.

Features
– Large area
– Low dark current
– High voltage tolerance

 

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.

 

Specifications

Photosensitive area	48 × 48 mm
Chip thickness	500 ± 15 μm
Dead layer thickness (Front side)	1.5 μm
Dead layer thickness (Rear side)	20 μm
Full depletion voltage max.	170 V
Dark current max.	200 nA
Cuttoff frequency	5 MHz
Terminal capacitance	550 pF