Description

Hamamatsu S14605 Large-area Si PIN photodiode for direct radiation detection

 

The S14605 is an unsealed type large large-area Si PIN photodiode for direct radiation detection. It can detect high-energy radiation with high efficiency.

Features
– High quantum efficiency
– High energy resolution
– Low capacitance
– Depletion layer: 0.5 mm

 

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.

 

Specifications

Photosensitive area	9.0 × 9.0 mm
Package	Ceramic
Package category	Unsealed
Cooling	Non-cooled
Reverse voltage (max.)	150 V
Dark current (max.)	30000 pA
Cutoff frequency (typ.)	20 MHz
Terminal capacitance (typ.)	25 pF
Measurement condition	Typ. Ta=25 ℃, Dark current: VR=100 mV, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted