Description
Hamamatsu S15137 Si photodiode for visible to infrared photometry
The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 µm is 0.57 A/W (typ.), which is about 1.5 times higher than that of previous products. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier.
Features
– High sensitivity in infrared region: 0.57 A/W (λ=1.06 µm)
– High-speed response: tr=12.5 ns (VR=100 V)
– Low capacitance: Ct=10 pF (VR=100 V)
– Large photosensitive area: φ5 mm
– High reliability: TO-8 metal package
Specifications
| Photosensitive area | φ5.0 mm |
|---|---|
| Package | Metal |
| Package category | TO-8 |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 150 V |
| Spectral response range | 360 to 1120 nm |
| Peak sensitivity wavelength (typ.) | 1000 nm |
| Photosensitivity (typ.) | 0.57 A/W |
| Dark current (max.) | 10000 pA |
| Rise time (typ.) | 0.0125 μs |
| Terminal capacitance (typ.) | 10 pF |
| Measurement condition | Ta=25 ℃, Typ., Photosensitivity: λ=1060 nm, Dark current: VR=100 V, Rise time: VR=100 V, RL=50 Ω, λ=1060 nm, 10 ～ 90%, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted |
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