Hamamatsu S16008-1010 Si photodiode for visible to near infrared region

$199.00

Hamamatsu S16008-1010 Si photodiode for visible to near infrared region Datasheet

Hamamatsu S16008-1010 Si photodiode for visible to near infrared region

Description

Hamamatsu S16008-1010 Si photodiode for visible to near infrared region

 

The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series.

Features
– High sensitivity in visible to near infrared region
– Low dark current
– Superior linearity
– Compatible with lead-free solder reflow

 

Specifications

Photosensitive area 10 × 10 mm
Package Glass epoxy
Package category Surface mount type
Cooling Non-cooled
Spectral response range 380 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.64 A/W
Dark current (max.) 200 pA
Rise time (typ.) 29 μs
Terminal capacitance (typ.) 13 nF
Noise equivalent power (typ.) 2.8×10-15 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=10 mV, Rise time: VR=0 V, RL=1 kΩ, 10 to 90%, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

 

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