Hamamatsu S16835-100DG High sensitivity, low noise 1 ch SPAD for visible and near infrared region

$199.00

Hamamatsu S16835-100DG High sensitivity, low noise 1 ch SPAD for visible and near infrared region Datasheet

Hamamatsu S16835-100DG High sensitivity, low noise 1 ch SPAD for visible and near infrared region

Description

Hamamatsu S16835-100DG High sensitivity, low noise 1 ch SPAD for visible and near infrared region

 

S16835-100DG is a TE-cooled single photon avalanche diode. It is available in types with photosensitivity area of ϕ100 μm, featuring low dark count and high detection efficiency.

 

Features
– Single photon counting is possible.
– Low dark count

– Low afterpulses
– Low voltage operation: VBR=40 V typ.
– High photon detection efficiency:gain: 67% typ.
– High gain: 106 to 107
– SPAD module also available (sold separately)

 

Specifications

Package type Metal (TO-8)
Effective photosensitive area φ 100 µm
Spectral response range 400~1000 nm
Peak sensitivity wavelength (typ.) 610 nm
Dark count (typ.) 0.06 kcps
Terminal capacitance (typ.) 3.2 pF
Gain (typ.) 1.5×106
Measurement condition Ta=25 ℃, Tchip=-20 ℃

 

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