Description
Hamamatsu S3590-08 Large photosensitive area Si PIN photodiode
Features
– Low capacitance
– High-speed response
– High stability
– Good energy resolution
– Sensitivity matching with BGO and CsI(TI) scintillators
Specifications
| Photosensitive area | 10 × 10 mm |
|---|---|
| Package | Ceramic |
| Package category | — |
| Cooling | Non-cooled |
| Reverse voltage (max.) | 100 V |
| Spectral response range | 340 to 1100 nm |
| Peak sensitivity wavelength (typ.) | 960 nm |
| Photosensitivity (typ.) | 0.66 A/W |
| Dark current (max.) | 6000 pA |
| Cutoff frequency (typ.) | 40 MHz |
| Terminal capacitance (typ.) | 40 pF |
| Noise equivalent power (typ.) | 3.8×10-14 W/Hz1/2 |
| Measurement condition | Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted |
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