Description

Hamamatsu S3590-09 Large photosensitive area Si PIN photodiode

 

Features
– Sensitivity matching with BGO and CsI(TI) scintillators
– Bare chip type (unsealed)
– High quantum efficiency
– Low capacitance
– High-speed response
– High stability
– Good energy resolution

 

Notice

The chip of this product is not sealed and is exposed.
Parts such as electrodes on the chip are not protected by an enclosure or window and so require especially strict care during handling compared to ordinary products.

 

Specifications

Photosensitive area	10 × 10 mm
Package	Ceramic
Package category	Unsealed
Cooling	Non-cooled
Reverse voltage (max.)	100 V
Spectral response range	340 to 1100 nm
Peak sensitivity wavelength (typ.)	960 nm
Photosensitivity (typ.)	0.66 A/W
Dark current (max.)	6000 pA
Cutoff frequency (typ.)	40 MHz
Terminal capacitance (typ.)	40 pF
Noise equivalent power (typ.)	3.8×10-14 W/Hz1/2
Measurement condition	Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted