Description

The S9119-01 is a wide directional Si PIN photodiode in a TO-18 package with a potted transparent epoxy resin.

Features
– Resin potting type
– Low dark current
– Low capacitance, high-speed response
– Wide directivity

Specifications

Photosensitive area	0.88 × 0.88 mm
Package	Metal
Package category	TO-18
Cooling	Non-cooled
Reverse voltage (max.)	30 V
Spectral response range	320 to 1060 nm
Peak sensitivity wavelength (typ.)	920 nm
Photosensitivity (typ.)	0.63 A/W
Dark current (max.)	10000 pA
Cutoff frequency (typ.)	80 MHz
Terminal capacitance (typ.)	5 pF
Measurement condition	Ta=25 ℃, Typ., Photosensitivity: λ=870 nm, Dark current: V_R=10 V, Cutoff frequency: V_R=10 V, R_L=50 Ω, λ=830 nm, -3 dB, Terminal capacitance: V_R=10 V, f=1 MHz, unless otherwise noted

There are no reviews yet.

Be the first to review “Hamamatsu S9119-01 Si PIN photodiode for visible to near infrared”

You must be logged in to post a review.