Hamamatsu InGaAs PIN Photodiode
Hamamatsu Photonics is a leading manufacturer of devices for the generation and measurement of visible, infrared, and ultraviolet light.
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are (group III) elements of the periodic table while arsenic is a (group V) element. Alloys made of these chemical groups are referred to as “III-V” compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
A p–i–n photodiode, also called PIN photodiode, is a photodiode with an intrinsic (i) (i.e., undoped) region in between the n- and p-doped regions.
Hamamatsu InGaAs PIN Photodiode