Description
- Type: LED
- Origin: CN(Origin)
- Condition: New
- Model Number: SGPD436C3
- Package Type: Through Hole
- Range of Spectral Bandwidth: 400—1100 nm
- Wavelength of Peak Sensitivity: 940 nm
- Open-Circuit Voltage: 0.35 V
- Reverse Light Current: 95 uA
- Dark Current: <10 nA
- Reverse Breakdown: >30 V
- Total Capacitance: 25 pF
- Rise/Fall Time: 50/50 nS
4.6mm(0.181") Semi-cylindrical Silicon Photodiode:SGPD436C3
Chip size 3.00mm x 3.00mm , Active area 2.86mm x 2.86 mm
Range of Spectral Bandwidth: 400—1100nm
Wavelength of Peak Sensitivity: 940 nm
Open-Circuit Voltage: 0.35 V
Reverse Light Current: 95 uA
Dark Current: <10 nA
Reverse Breakdown Voltage: >30 V
Total Capacitance: 25 pF
Rise/Fall Time: 50/50 nS
For detailed product parameters, please check the specifications and download the specifications from the company's website
Factory direct sales, batch purchase customers can contact the seller to arrange production
1000 pcs/bag
Difference between SGPD538C3 and PD438C and SGPD436C3
SGPD538C3 :Size 5.0×3.8×6.6mm ,Reverse photosensitive current 105 uA
PD438C:Size 4.8×3.8×6.6mm ,Reverse photosensitive current 95 uA
SGPD436C3 :Size 4.6×3.4×6.6mm ,Reverse photosensitive current 95 uA
Difference between Photodiode and Phototransistor
A. Abbreviation: Photodiode—PD / Phototransistor—PT
B. PIN Name: Photodiode—Anode and Cathode / Phototransistor—Emitter and Collector
C. Chip Structure: Photodiode—PN / Phototransistor—NPN(or PNP)
D. Response speed：Photodiode—fast /Phototransistor—slow
E. Amplification characteristics： Photodiode—No / Phototransistor—Yes
F. Output Linearity: Photodiode—Good / Phototransistor—Bad
G. Circuit symbol：Photodiode
Phototransistor 
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